Saturday, December 15, 2007

10kV High Voltage Transistor

Panasonic reported that they have developed a gallium nitride power transistor with an extremely high breakdown voltage of more than 10kV.

This GaN transistor was described at IEEE International Electron Devices Meeting (IEDM 2007) in Washington DC.

The data taken on this high voltage transistor included a breakdown voltage of 10.4kV and on-state resistance of 186Ωcm².

Panasonic indicated that they used GaN film on a highly resistive sapphire substrate with a new structure.

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